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ASD (K8D) IGBT 吸收电容器

产品简介:

容量范围: 0.0068 to 8.5 μF

额定电压: 700 to 3000 Vdc

应用:专为缓冲器/脉冲应用设计。适用于需要极其可靠接触的高脉冲和高频应用,例如IGBT应用。 风力变流器、中高频感应供暖、电动汽车、电压电、AP、逆变器。


产品详情

产品标签

GENERAL TECHNICAL CHARACTERISTICS 技术特性

Reference standards 参考标准   IEC 61071, IEC 60068

Dielectric 介质材料             Polypropylene film

Construction 封装结构          Dry construction, Non-inductive type

Case 外壳材料                Polyester tape wrapping, UL94 V-0 material filling

Leads 引出端                 Tinned copper wire

 

ELECTRICAL CHARACTERISTICS 电气特性                                      

Operating temperature 工作温度范围    - 40 to + 85

Capacitance range 容量范围           0.0068 to 8.5 μF

Rated voltage range 额定电压          700 to 3000 Vdc

Capacitance tolerance 容量偏差        ± 5%, ± 10%

Dissipation factor 损耗角正切          ≤6.0×10-4 Measured at 1000 Hz and 20±5

Life expectancy 预期寿命              100,000 hours at UNDC and 70 (Hot-spot temperature)

 

TEST METHODS AND PERFORMANCES 测试方法

Dielectric strength 介质强度            1.5×UNDC applied to 10s at 20±5

Test voltage terminal to case 端壳耐压   3KVAC/50Hz for 10s

Insulation resistance(IR*CN)  绝缘电阻   30000s but need not exceed 30GΩ,

after 1 minute of electrification at 100VDC (20±5)




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